Control of acceptor doping in MOCVD HgCdTe epilayers
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چکیده
منابع مشابه
Photo-induced Doping in GaN Epilayers with Graphene Quantum Dots.
We demonstrate a new doping scheme where photo-induced carriers from graphene quantum dots (GQDs) can be injected into GaN and greatly enhance photoluminescence (PL) in GaN epilayers. An 8.3-fold enhancement of PL in GaN is observed after the doping. On the basis of time-resolved PL studies, the PL enhancement is attributed to the carrier transfer from GQDs to GaN. Such a carrier transfer proce...
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ژورنال
عنوان ژورنال: Opto-Electronics Review
سال: 2010
ISSN: 1896-3757
DOI: 10.2478/s11772-010-1023-x